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INCHANGE

BU126 Datasheet Preview

BU126 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistors
INCHANGE Semiconductor
BU126
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
:VCEO(SUS) = 300V(Min.)
·Collector Current- IC= 3A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in regulator, inverter, switching mode
power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
750
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC= 25
Tj
Junction Temperature
2
A
40
W
125
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~125
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
isc websitewww.iscsemi.com
2.5 /W
1 isc & iscsemi is registered trademark




INCHANGE

BU126 Datasheet Preview

BU126 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
INCHANGE Semiconductor
BU126
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
300
V
V(BR)EBO Collector-Base Breakdown Voltage IE= 1mA; IC= 0
6
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
10
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
hFE
DC Current Gain
IC= 4A; IB= 1A
VCE= 750V; VBE= 0
VCE= 750V; VBE= 0; Ta= 125
IC= 1A; VCE= 15V
15
1.5
V
0.5
2.0
mA
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V
10
MHz
tf
Fall Time
IC= 2.5A; IB= 0.25A
0.2
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU126
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BU126 Datasheet PDF





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