D1416 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain.
D1416 is Silicon NPN Darlington Power Transistor manufactured by Inchange Semiconductor.
| Part Number | Description |
|---|---|
| D1410 | Silicon NPN Darlington Power Transistor |
| D1412 | Silicon NPN Power Transistor |
| D1404 | Silicon NPN Power Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain.