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FDP085N10A - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on) ≤8.5mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC to DC converters ·synchronous rectification for telecommunication PSU ·AC motor drives and uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 96 IDM Drain Current-Single Pulsed 384 PD Total Dissipation @TC=25℃ 188 Tj Max.