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IRF2804S - N-Channel MOSFET

General Description

Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Provides the designer with an extremely efficient and reliable device for use in a wide variety of a

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@TC=100℃ 200 A IDM Pulse Drain Current 1080 A Ptot Total Dissipation 330 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.