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IRF3707Z - N-Channel MOSFET

Datasheet Summary

Features

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  • Low drain-source on-resistance: RDS(on) ≤9.5mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRF3707Z

Datasheet Details

Part number IRF3707Z
Manufacturer INCHANGE
File Size 242.11 KB
Description N-Channel MOSFET
Datasheet download datasheet IRF3707Z Datasheet
Additional preview pages of the IRF3707Z datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3707Z， IIRF3707Z ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤9.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 59 IDM Drain Current-Single Pulsed 230 PD Total Dissipation @TC=25℃ 57 Tj Max.
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