Datasheet4U Logo Datasheet4U.com

IRF3709Z - N-Channel MOSFET

Features

  • br>.
  • Low drain-source on-resistance: RDS(on) ≤6.3mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF3709Z HEXFET Power MOSFET International Rectifier
IRF3709ZCL HEXFET Power MOSFET International Rectifier
IRF3709ZCLPBF HEXFET Power MOSFET International Rectifier
IRF3709ZCS N-Channel MOSFET VBsemi
IRF3709ZCS HEXFET Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF3709ZCS N-Channel MOSFET
IRF3709ZS N-Channel MOSFET
IRF3709 N-Channel MOSFET
IRF3709S N-Channel MOSFET
IRF3703 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3709Z， IIRF3709Z ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤6.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 87 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 79 Tj Max.
Published: |