Key Features
- Static drain-source on-resistance: RDS(on) ≤6.0mΩ
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- reliable device for use in a wide variety of applications
Datasheets by Manufacturer
- IRF3711ZPbF — International Rectifier — Power MOSFET
- IRF3711ZSPbF — International Rectifier — Power MOSFET
- IRF3711ZLPbF — International Rectifier — Power MOSFET
- IRF3710 — Nell Power Semiconductor — N-Channel Power MOSFET
- IRF3717 — International Rectifier — Power MOSFET
- IRF3710ZS — International Rectifier — HEXFET Power MOSFET