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IRF3808 - N-Channel MOSFET

IRF3808 Description

isc N-Channel MOSFET Transistor *.

IRF3808 Features

* Static drain-source on-resistance: RDS(on) ≤7.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF3808 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 140 IDM Drain Current-Single Pulsed 550 PD Total Dissipation @TC=25℃ 330 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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Datasheet Details

Part number
IRF3808
Manufacturer
INCHANGE
File Size
241.12 KB
Datasheet
IRF3808-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF3808-like datasheet