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IRF3808 Datasheet Preview

IRF3808 Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤7.0m
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
140
IDM
Drain Current-Single Pulsed
550
PD
Total Dissipation @TC=25
330
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
0.45
62
UNIT
/W
/W
IRF3808IIRF3808
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

IRF3808 Datasheet Preview

IRF3808 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =250μA
VGS(th)
Gate Threshold Voltage
VDS=10V; ID =250μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=82A
IGSS
Gate-Source Leakage Current
VGS=±20V
IDSS
Drain-Source Leakage Current
VDS=75V; VGS= 0V
VSD
Diode forward voltage
IS=82A, VGS = 0V
IRF3808IIRF3808
MIN TYP MAX UNIT
75
V
2.0
4.0
V
7.0 mΩ
±0.2 μA
20
μA
1.3
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number IRF3808
Description N-Channel MOSFET
Maker INCHANGE
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IRF3808 Datasheet PDF






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