IRFP260M - N-Channel MOSFET

Inchange Semiconductor

Key Features

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Static drain-source on-resistance: RDS(on)≤40mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IRFP260M n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRFP260M
Manufacturer	Inchange Semiconductor
File Size	242.75 KB
Description	N-Channel MOSFET
Datasheet	IRFP260M Datasheet

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260M，IIRFP260M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.