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IRFR4105Z - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤24.5mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRFR4105Z

Datasheet Details

Part number IRFR4105Z
Manufacturer INCHANGE
File Size 237.57 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFR4105Z Datasheet
Additional preview pages of the IRFR4105Z datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRFR4105Z, IIRFR4105Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤24.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 48 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 3.
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