MJ11033 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A.
MJ11033 is PNP Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
MJ11033 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
onsemi |
MJ11033 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
Seme LAB |
MJ11033 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
DIGITRON |
MJ11033 | Power Transistor |
NTE Electronics |
MJ11033 | Silicon PNP Transistor |
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A.