900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

MJ11033 Datasheet Preview

MJ11033 Datasheet

PNP Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJ11033
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -120V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= -25A
: hFE= 400(Min.)@IC= -50A
·Complement to the NPN MJ11032
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continunous
-50
A
ICM
Collector Current-Peak
-100
A
IB
Base Current-Continunous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
-2
A
300
W
200
Tstg
Storage Temperature Range
-55~+200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.584 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

MJ11033 Datasheet Preview

MJ11033 Datasheet

PNP Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJ11033
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -25A; IB= -250mA
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= -50A; IB= 500mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -25A; IB= -250mA
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= -50A; IB= -500mA
VCB=-120V;IE=0
VCB=-120V;IE=0; TC=150
VCE= -120V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -25A, VCE= -5V
hFE-2
DC Current Gain
IC= -50A, VCE= -5V
MIN TYP. MAX UNIT
-120
V
-2.5
V
-3.5
V
-3.0
V
-4.5
V
-2.0
-5.0
mA
-2.0 mA
-5.0 mA
1000
18000
400
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number MJ11033
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

MJ11033 Datasheet PDF





Similar Datasheet

1 MJ11030 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Motorola
2 MJ11030 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
ON
3 MJ11030 COMPLEMENTARY DARLINGTON POWER TRANSISTOR
Seme LAB
4 MJ11030 Power Transistor
DIGITRON
5 MJ11031 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Motorola
6 MJ11031 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
ON
7 MJ11031 COMPLEMENTARY DARLINGTON POWER TRANSISTOR
Seme LAB
8 MJ11031 Power Transistors
Mospec
9 MJ11031 Power Transistor
DIGITRON





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy