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MJ11033 - PNP Transistor

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Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A Complement to the NPN MJ11032 APPLICATIONS

general purpose amplifier applications.

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Datasheet Details

Part number MJ11033
Manufacturer INCHANGE
File Size 182.38 KB
Description PNP Transistor
Datasheet download datasheet MJ11033 Datasheet
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Full PDF Text Transcription

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification MJ11033 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to the NPN MJ11032 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
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