MJ11033 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A.
| Part number | MJ11033 |
|---|---|
| Download | MJ11033 Datasheet (PDF) |
| File Size | 182.38 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
|
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
MJ11033 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
ON |
MJ11033 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
Seme LAB |
MJ11033 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
DIGITRON |
MJ11033 | Power Transistor |
NTE Electronics (defunct) |
MJ11033 | Silicon PNP Transistor |
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A.