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MJE702T - PNP Transistor

Description

Collector Emitter Breakdown Voltage : V(BR)CEO = -80 V DC Current Gain : hFE = 750(Min) @ IC= -1.5A = 100(Min) @ IC= -4A Complement to Type MJE802T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi

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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJE702T DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -80 V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5A = 100(Min) @ IC= -4A ·Complement to Type MJE802T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature -0.
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