Datasheet Summary
isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector- Emitter Breakdown Voltage-
: V(BR)CEO = -80 V
- DC Current Gain-
: hFE = 750(Min) @ IC= -1.5A = 100(Min) @ IC= -4A
- plement to Type MJE802T
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general-purpose amplifier and low-speed switching...
