| Part number | MJE702T |
|---|---|
| Download | MJE702T Datasheet (PDF) |
| File Size | 210.75 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
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| Manufacturer | Part Number | Description |
|---|---|---|
Central Semiconductor |
MJE702T | POWER TRANSISTOR |
Fairchild |
MJE702 | PNP Epitaxial Silicon Darlington Transistor |
Motorola Semiconductor |
MJE702 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS |
ON |
MJE702 | DARLINGTON POWER TRANSISTORS |
|
Central Semiconductor |
MJE702 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
·Collector Emitter Breakdown Voltage : V(BR)CEO = -80 V ·DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJE702T TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;.
