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INCHANGE

STP13NM60ND Datasheet Preview

STP13NM60ND Datasheet

N-Channel MOSFET

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isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
STP13NM60ND
·FEATURES
·Drain Current ID= 11A@ TC=25
·Drain Source Voltage-
: VDSS=600V(Min)
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current-continuous@ TC=25
11
A
IDM
Pulse Drain Current
44
A
Ptot
Total Dissipation@TC=25
110
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.14 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

STP13NM60ND Datasheet Preview

STP13NM60ND Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
STP13NM60ND
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS=11A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID=5.5A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VDS= 600V; TC=125
MIN TYPE MAX UNIT
600
V
3
5
V
1.6
V
380 mΩ
±100 nA
1
µA
100
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number STP13NM60ND
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
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STP13NM60ND Datasheet PDF





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