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TIP31C - NPN Transistor

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Description

DC Current Gain -hFE = 25(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) Complement to Type TIP32C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and swi

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Datasheet Details

Part number TIP31C
Manufacturer INCHANGE
File Size 206.14 KB
Description NPN Transistor
Datasheet download datasheet TIP31C Datasheet
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isc Silicon NPN Power Transistors INCHANGE Semiconductor TIP31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Complement to Type TIP32C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
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