Datasheet4U Logo Datasheet4U.com

TK4P60DA - N-Channel MOSFET

Features

  • With To-252(DPAK) package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK4P60DA Silicon N-Channel MOSFET Toshiba Semiconductor
TK4P60D Silicon N-Channel MOSFET Toshiba Semiconductor
TK4P60DB Silicon N-Channel MOSFET Toshiba Semiconductor
TK4P50D Silicon N-Channel MOSFET Toshiba Semiconductor
TK4P55D Silicon N-Channel MOSFET Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
TK4P60DB N-Channel MOSFET
TK4P50D N-Channel MOSFET
TK4P50DA N-Channel MOSFET
TK4P55D N-Channel MOSFET
TK40A06N1 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK4P60DA ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 3.5 IDM Drain Current-Single Pulsed 14 PD Total Dissipation @TC=25℃ 80 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.
Published: |