Datasheet Details
| Part number | TTD1410 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.65 KB |
| Description | NPN Transistor |
| Download | TTD1410 Download (PDF) |
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| Part number | TTD1410 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.65 KB |
| Description | NPN Transistor |
| Download | TTD1410 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2.0 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTD1410 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TTD1410 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
isc Silicon NPN Darlington Power Transistor.
| Part Number | Description |
|---|---|
| TTD1415 | NPN Transistor |
| TTD1415B | Silicon NPN Power Transistor |
| TTD1409B | NPN Transistor |