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TTD1410 Datasheet Preview

TTD1410 Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min)
·Collector-Emitter Saturation Voltage-
:V CE(sat)= 2.0V(Max) @IC= 4A
·High DC Current Gain
: hFE= 2000(Min) @ IC= 2A, VCE= 2V
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
APPLICATIONS
·Igniter applications
·High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1
A
2.0
W
30
150
Tstg
Storage Temperature Range
-55~150
TTD1410
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

TTD1410 Datasheet Preview

TTD1410 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
TTD1410
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; L= 40mH
250
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
2.5
V
ICBO
Collector Cutoff Current
VCB= 300V; IE= 0
500 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
500 μA
hFE -1
DC Current Gain
IC= 2A ; VCE= 2V
2000
hFE -2
DC Current Gain
IC= 4A ; VCE= 2V
200
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest=1MHz
35
pF
Switching times
ton
Turn-on Time
1.0
μs
tstg
Storage Time
IC= 4A , IB1= IB2= 40mA
RL= 25Ω; VCC= 100V
8.0
μs
tf
Fall Time
5.0
μs
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number TTD1410
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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