IRFU9310 Datasheet - IRF

Power MOSFET

IRFU9310 Features

* A M B NOT ES: 0.58 (.023) 0.46 (.018) 2.28 (.090) 4.57 (.180) 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS ION : INCH. 3 CO NFO RMS T O JEDE C O UTLINE TO -252AA . 4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP , SO LDER DIP MA X. +0.16 (.006). Part Markin

IRFU9310 General Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ex.

IRFU9310 Datasheet (116.79 KB)

IRFU9310 Datasheet Preview — Preview of IRFU9310 PDF

Datasheet Details

Part number:

IRFU9310

Manufacturer:

IRF

File Size:

116.79 KB

Description:

Power mosfet.
PD 9.1663 PRELIMINARY l l l l l l IRFR/U9310 HEXFET® Power MOSFET D P-Channel Surface Mount (IRFR9310) Straight Lead (IRFU9310) Advanced Process Te.

📁 Related Datasheet

IRFU9310 Power MOSFET (Vishay Siliconix)

IRFU9310PBF Power MOSFET (International Rectifier)

IRFU9010 (IRFR9010/14 / IRFU9010/14) P-Channel Power MOSFET (Samsung Electronics)

IRFU9010 P-Channel Transistor (International Rectifier)

IRFU9010 Power MOSFET (Vishay)

IRFU9012 P-Channel Transistor (International Rectifier)

IRFU9014 Power MOSFET (IRF)

IRFU9014 (IRFR9010/14 / IRFU9010/14) P-Channel Power MOSFET (Samsung Electronics)

IRFU9014 Power MOSFET (Vishay Siliconix)

IRFU9014PBF Power MOSFET (IRF)

TAGS

IRFU9310 Power MOSFET IRF

Image Gallery

IRFU9310 Features

IRFU9310 General Description

Datasheet Details

File Size:

Description:

IRFU9310 Distributor