IRFU9310 mosfet equivalent, power mosfet.
ctance
* Ground Plane
* Low Leakage Inductance Current Transformer
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*
+
RG VGS
* dv/dt controlled by RG
* ISD controlled by Duty Factor "D" <.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead.
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ar.
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