IRG4BC20SD Datasheet - IRF

INSULATED GATE BIPOLAR TRANSISTOR

* Extremely low voltage drop 1.4Vtyp. @ 10A

* S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.

* Very Tight Vce(on) distribution

* IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery

IRG4BC20SD

IRF

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Insulated gate bipolar transistor.

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IRG4BC20SD INSULATED GATE BIPOLAR TRANSISTOR IRF

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