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International Rectifier Electronic Components Datasheet

IRG4BC20FD-SPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD -95965
IRG4BC20FD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D2Pak package
Lead-Free
C
G
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Fast CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
D 2 Pak
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
16
9.0
64
64
8.0
60
± 20
60
24
-55 to +150
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient ( PCB Mounted,steady-state)*
Weight
Typ.
–––
–––
–––
1.44
Max.
2.1
3.5
80
–––
Units
°C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
www.irf.com
1
11/19/04


International Rectifier Electronic Components Datasheet

IRG4BC20FD-SPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

www.datasheet4u.com
IRG4BC20FD-SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.72 — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage — 1.66 2.0
IC = 9.0A
VGE = 15V
— 2.06 — V IC = 16A
See Fig. 2, 5
— 1.76 —
IC = 9.0A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance „
2.9 5.1 — S VCE = 100V, IC = 9.0A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 1700
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 1.4 1.7 V IC = 8.0A
See Fig. 13
— 1.3 1.6
IC = 8.0A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Min. Typ. Max. Units
Conditions
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
— 27 40
IC = 9.0A
— 4.2 6.2 nC VCC = 400V
See Fig. 8
Gate - Collector Charge (turn-on)
Turn-On Delay Time
— 9.9 15
— 43 —
VGE = 15V
TJ = 25°C
Rise Time
Turn-Off Delay Time
— 20 — ns IC = 9.0A, VCC = 480V
— 240 360
VGE = 15V, RG = 50
Fall Time
— 150 220
Energy losses include "tail" and
Turn-On Switching Loss
— 0.25 —
diode reverse recovery.
Turn-Off Switching Loss
— 0.64 — mJ See Fig. 9, 10, 18
Total Switching Loss
— 0.89 1.3
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
— 41 —
— 22 —
— 320 —
— 290 —
TJ = 150°C, See Fig. 10, 11, 18
ns IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail" and
Total Switching Loss
— 1.35 — mJ diode reverse recovery.
Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Input Capacitance
Output Capacitance
— 540 —
— 37 —
VGE = 0V
pF VCC = 30V
See Fig. 7
Reverse Transfer Capacitance
— 7.0 —
ƒ = 1.0MHz
Diode Reverse Recovery Time
— 37 55 ns TJ = 25°C See Fig.
— 55 90
Diode Peak Reverse Recovery Current — 3.5 5.0
TJ = 125°C 14
A TJ = 25°C See Fig.
IF = 8.0A
Diode Reverse Recovery Charge
— 4.5 8.0
TJ = 125°C 15
VR = 200V
— 65 138 nC TJ = 25°C See Fig.
Diode Peak Rate of Fall of Recovery
— 124 360
TJ = 125°C 16 di/dt = 200A/µs
— 240 — A/µs TJ = 25°C See Fig.
During tb
— 210 —
TJ = 125°C 17
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Part Number IRG4BC20FD-SPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 12 Pages
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