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PD - 95445A
IRG4BC20UPbF
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast Speed IGBT
Features
UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-220AB package
Lead-Free
C
G E
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
VCES = 600V VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.
IRG4BC20UPbF Datasheet
