IRG4BC20UD-SPBF
Key Features
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard D2Pak package
- Lead-Free C G E N-channel VCES = 600V VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A Benefits
- Generation 4 IGBTs offers highest efficiencies available
- Optimized for specific application conditions
- HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs D2Pak
