IRG4PC40F Datasheet - IRF

INSULATED GATE BIPOLAR TRANSISTOR

* Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

* Industry standard TO-247AC package C Fast Speed IGBT VCES

IRG4PC40F

IRF

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Insulated gate bipolar transistor.

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IRG4PC40F INSULATED GATE BIPOLAR TRANSISTOR IRF

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