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International Rectifier Electronic Components Datasheet

IRG4PC40S Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD 91465B
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40S
Standard Speed IGBT
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.32V
@VGE = 15V, IC = 31A
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
60
31
120
120
± 20
15
160
65
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
1
12/30/00


International Rectifier Electronic Components Datasheet

IRG4PC40S Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4PC40S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600 — —
Emitter-to-Collector Breakdown Voltage T 18 — —
V VGE = 0V, IC = 250µA
V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.75 V/°C VGE = 0V, IC = 1.0mA
1.32 1.5
IC = 31A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
1.68 V IC = 60A
See Fig.2, 5
1.32
IC = 31A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
3.0 6.0
VCE = VGE, IC = 250µA
-9.3 mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U
12 21 S VCE = 100V, IC = 31A
ICES
Zero Gate Voltage Collector Current
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 150
IC = 31A
14 21
34 51
nC VCC = 400V
VGE = 15V
See Fig. 8
22
18 ns TJ = 25°C
650 980
IC = 31A, VCC = 480V
380 570
VGE = 15V, RG = 10
0.45
Energy losses include "tail"
6.5 mJ See Fig. 10, 11, 13, 14
6.95 9.9
23
TJ = 150°C,
21
1000
ns IC = 31A, VCC = 480V
VGE = 15V, RG = 10
940
Energy losses include "tail"
12 mJ See Fig. 13, 14
13 nH Measured 5mm from package
2200
VGE = 0V
140
26
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10,
(See fig. 13a)
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2 www.irf.com


Part Number IRG4PC40S
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker IRF
Total Page 8 Pages
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