IRG4PH40UD2-E transistor equivalent, insulated gate bipolar transistor.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
VCES = 1200V
UltraFast IGBT optimized for high operating frequencies up .
Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimize.
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