IRG4PH40UD2-EP transistor equivalent, insulated gate bipolar transistor.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
VCES = 1200V
G E
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
Benefits
n-c.
Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimize.
Image gallery
Download