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International Rectifier Electronic Components Datasheet

IRG4PH50SPbF Datasheet

Standard Speed IGBT

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PD -95525A
IRG4PH50SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Lead-Free
C
G
E
n-channel
Standard Speed IGBT
VCES =1200V
VCE(on) typ. = 1.47V
@VGE = 15V, IC = 33A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
cPulsed Collector Current
dClamped Inductive Load Current
Gate-to-Emitter Voltage
eTransient Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
1200
57
33
114
114
± 20
± 30
270
200
80
-55 to + 150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
mJ
W
°C
Min.
Typ.
0.24
6.0(0.21)
Max.
0.64
40
Units
°C/W
g (oz)
1
07/08/08


International Rectifier Electronic Components Datasheet

IRG4PH50SPbF Datasheet

Standard Speed IGBT

No Preview Available !

IRG4PH50SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage 1200
Emitter-to-Collector Breakdown Voltage „ 18
Temperature Coeff. of Breakdown Voltage —
1.22
1.47
1.7
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0 A
VGE = 0V, IC = 2.0 mA
IC = 33A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance …
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
— 1.75 —
— 1.55 —
V
IC = 57A
See Fig.2, 5
IC = 33A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -11 — mV/°C VCE = VGE, IC = 250µA
27 40 —
S VCE = 100V, IC = 33A
— — 250 µA VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 1200V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 167 251
IC = 33A
— 25 38 nC VCC = 400V
See Fig. 8
— 55 83
VGE = 15V
— 32 —
29 —
845 1268
ns
TJ = 25°C
IC = 33A, VCC = 960V
— 425 638
VGE = 15V, RG = 5.0
— 1.80 —
Energy losses include "tail"
— 19.6 — mJ See Fig. 9, 10, 14
— 21.4 44
— 32 —
TJ = 150°C,
— 30 —
— 1170 —
ns
IC = 33A, VCC = 960V
VGE = 15V, RG = 5.0
— 1000 —
Energy losses include "tail"
— 37 — mJ See Fig. 10,11,14
— 13 — nH Measured 5mm from package
— 3600 —
VGE = 0V
— 160 — pF VCC = 30V
See Fig. 7
— 30 —
ƒ = 1.0MHz
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
2 www.irf.com


Part Number IRG4PH50SPbF
Description Standard Speed IGBT
Maker IRF
Total Page 8 Pages
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