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International Rectifier Electronic Components Datasheet

IRGPC40 Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.693A
IRGPC40F
Fast Speed IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 600V
VCE(sat) 2.0V
@VGE = 15V, IC = 27A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
49
27
200
200
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-81
Min.
Typ.
0.24
6 (0.21)
Max.
0.77
40
Units
°C/W
g (oz)
Revision 0
To Order


International Rectifier Electronic Components Datasheet

IRGPC40 Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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IRGPC40F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES Collector-to-Emitter Breakdown Voltage
V(BR)ECS Emitter-to-Collector Breakdown Voltage
V(BR)CES/TJ Temp. Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
Conditions
600 — — V VGE = 0V, IC = 250µA
20 — — V VGE = 0V, IC = 1.0A
— 0.70 — V/°C VGE = 0V, IC = 1.0mA
— 1.7 2.0
IC = 27A
VGE = 15V
— 2.2 — V IC = 49A
See Fig. 2, 5
— 1.9 —
IC = 27A, TJ = 150°C
3.0 — 5.5
VCE = VGE, IC = 250µA
— -12 — mV/°C VCE = VGE, IC = 250µA
9.2 12 — S VCE = 100V, IC = 27A
— — 250 µA VGE = 0V, VCE = 600V
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 59 80
IC = 27A
— 8.6 10 nC VCC = 400V
See Fig. 8
— 25 42
VGE = 15V
— 25 —
TJ = 25°C
— 37 — ns IC = 27A, VCC = 480V
— 240 410
VGE = 15V, RG = 10
— 230 420
Energy losses include "tail"
— 0.65 —
— 3.0 — mJ See Fig. 9, 10, 11, 14
— 3.65 6.0
— 28 —
TJ = 150°C,
— 37 —
— 380 —
ns IC = 27A, VCC = 480V
VGE = 15V, RG = 10
— 460 —
Energy losses include "tail"
— 6.0 — mJ See Fig. 10, 14
— 13 — nH Measured 5mm from package
— 1500 —
VGE = 0V
— 190 — pF VCC = 30V
See Fig. 7
— 20 —
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10, ( See fig. 13a )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-82
To Order


Part Number IRGPC40
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker IRF
Total Page 6 Pages
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