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International Rectifier Electronic Components Datasheet

IRGPC40MD2 Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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Preliminary Data Sheet PD - 9.1084
IRGPC40MD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to
10kHz)
G
C
E
n-channel
Short Circuit Rated
Fast CoPack IGBT
VCES = 600V
VCE(sat) 3.0V
@VGE = 15V, IC = 24A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
TO-247AC
Max.
600
40
24
80
80
15
80
10
± 20
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-397
Min.
Typ.
0.24
6 (0.21)
Max.
0.77
1.7
40
Units
°C/W
g (oz)
Revision 2
To Order


International Rectifier Electronic Components Datasheet

IRGPC40MD2 Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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IRGPC40MD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.70 — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage — 2.0 3.0
IC = 24A
VGE = 15V
— 2.6 — V IC = 40A
— 2.4 —
IC = 24A, T J = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
9.2 12 — S VCE = 100V, I C = 24A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 3500
VGE = 0V, VCE = 600V, T J = 150°C
VFM Diode Forward Voltage Drop
— 1.3 1.7 V IC = 15A
— 1.2 1.6
IC = 15A, T J = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 59 80
IC = 24A
Qge Gate - Emitter Charge (turn-on)
— 8.6 10 nC VCC = 400V
Qgc Gate - Collector Charge (turn-on)
— 25 42
td(on)
Turn-On Delay Time
— 26 —
TJ = 25°C
tr Rise Time
— 37 — ns IC = 24A, VCC = 480V
td(off)
Turn-Off Delay Time
— 240 410
VGE = 15V, R G = 10
tf Fall Time
— 230 420
Energy losses include "tail" and
Eon Turn-On Switching Loss
— 0.75 —
diode reverse recovery.
Eoff Turn-Off Switching Loss
— 1.65 — mJ
Ets Total Switching Loss
— 2.4 3.6
tsc Short Circuit Withstand Time
10 — — µs VCC = 360V, T J = 125°C
VGE = 15V, R G = 10, VCPK < 500V
td(on)
Turn-On Delay Time
— 28 —
TJ = 150°C,
tr Rise Time
— 37 — ns IC = 24A, VCC = 480V
td(off)
Turn-Off Delay Time
— 380 —
VGE = 15V, R G = 10
tf Fall Time
— 460 —
Energy losses include "tail" and
Ets Total Switching Loss
— 4.5 — mJ diode reverse recovery.
LE Internal Emitter Inductance
— 13 — nH Measured 5mm from package
Cies Input Capacitance
— 1500 —
VGE = 0V
Coes
Output Capacitance
— 190 — pF VCC = 30V
Cres Reverse Transfer Capacitance
— 20 —
ƒ = 1.0MHz
trr Diode Reverse Recovery Time
— 42 60 ns TJ = 25°C
— 74 120
TJ = 125°C
IF = 15A
Irr Diode Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C
— 6.5 10
TJ = 125°C
VR = 200V
Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C
— 220 600
TJ = 125°C
di/dt = 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery
— 188 — A/µs TJ = 25°C
During tb
— 160 —
TJ = 125°C
Notes: Repetitive rating; V GE=20V, pulse width limited
by max. junction temperature.
Refer to Section D for the following:
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10.
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
Package Outline 3 - JEDEC Outline TO-247AC
C-398
Section D - page D-13
To Order


Part Number IRGPC40MD2
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker IRF
Total Page 2 Pages
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