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Integrated Silicon Solution Electronic Components Datasheet

IS43R16400B Datasheet

Four internal banks for concurrent operation

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IS43R16400B
4Mx16
64Mb DDR SDRAM
OCTOBER 2012
FEATURES
• VDD and VDDQ: 2.5V ± 0.2V (-5, -6)
• VDD and VDDQ: 2.6V ± 0.1V (-4)
• SSTL_2 compatible I/O
• Double-data rate architecture; two data transfers
per clock cycle
• Bidirectional, data strobe (DQS) is transmitted/
received with data, to be used in capturing data
at the receiver
• DQS is edge-aligned with data for READs and
centre-aligned with data for WRITEs
• Differential clock inputs (CK and CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge;
data and data mask referenced to both edges of
DQS
• Four internal banks for concurrent operation
• Data Mask for write data. DM masks write data
at both rising and falling edges of data strobe
• Burst Length: 2, 4 and 8
• Burst Type: Sequential and Interleave mode
• Programmable CAS latency: 2, 2.5, 3 and 4
• Auto Refresh and Self Refresh Modes
• Auto Precharge
• TRAS Lockout supported (tRAP = tRCD)
OPTIONS
• Configuration(s):
4M x16
• Package:
66-pin TSOP-II
• Lead-free package available
• Temperature Range:
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
DEVICE OVERVIEW
ISSI’s 64-Mbit DDR SDRAM achieves high speed data
transfer using pipeline architecture and two data word
accesses per clock cycle. The 67,108,864-bit memory
array is internally organized as four banks of 16Mb to
allow concurrent operations. The pipeline allows Read
and Write burst accesses to be virtually continuous, with
the option to concatenate or truncate the bursts. The
programmable features of burst length, burst sequence
and CAS latency enable further advantages. The
device is available in 16-bit data word size Input data is
registered on the I/O pins on both edges of Data Strobe
signal(s), while output data is referenced to both edges
of Data Strobe and both edges of CLK. Commands are
registered on the positive edges of CLK.
An Auto Refresh mode is provided, along with a Self
Refresh mode. All I/Os are SSTL_2 compatible.
ADDRESS TABLE
Parameter
4M x 16
Configuration
www.DataSheet.net/
Bank Address
Pins
1M x 16 x 4 banks
BA0, BA1
Autoprecharge
Pins
A10/AP
Row Addresses A0 – A11
Column Address A0 – A7
Refresh Count 4K / 64ms
KEY TIMING PARAMETERS
Speed Grade
-4 -5
-6
Fck Max CL = 4 250 — —
Fck Max CL = 3 200 200 166
Fck Max CL = 2.5 166 166
Fck Max CL = 2 133 133
Units
MHz
MHz
MHz
MHz
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. 1
Rev.B
10/22/2011
Datasheet pdf - http://www.DataSheet4U.co.kr/


Integrated Silicon Solution Electronic Components Datasheet

IS43R16400B Datasheet

Four internal banks for concurrent operation

No Preview Available !

IS43R16400B
FUNCTIONAL BLOCK DIAGRAM (4Mx16)
CLK
CLK
CKE
CS
RAS
CAS
WE
COMMAND
DECODER
&
CLOCK
GENERATOR
MODE REGISTER
AND EXTENDED
MODE REGISTER
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
14
ROW
ADDRESS
14 LATCH
12
COLUMN
ADDRESS LATCH
9
BURST COUNTER
COLUMN
ADDRESS BUFFER
REFRESH
CONTROLLER
SELF
REFRESH
CONTROLLER
DATA IN
BUFFER
16
16
LDM, UDM
2
UDQS, LDQS
I/O 0-15
2
DATA OUT
BUFFER
16 16
VDD/VDDQ
Vss/VssQ
REFRESH
COUNTER
12
2
ROW
ADDRESS
BUFFER
12
12
4096
4096
4096
4096
MEMORY CELL
ARRAY
BANK 0
SENSE AMP I/O GATE
BANK CONTROL LOGIC
www.DataSheet.net/
9
512
(x16)
COLUMN DECODER
2 Integrated Silicon Solution, Inc.
Rev.B
10/22/2011
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number IS43R16400B
Description Four internal banks for concurrent operation
Maker ISSI
Total Page 30 Pages
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