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IS43R16400B Datasheet Four internal banks for concurrent operation

Manufacturer: ISSI (now Infineon)

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Overview

IS43R16400B 4Mx16 64Mb DDR SDRAM.

Key Features

  • VDD and VDDQ: 2.5V ± 0.2V (-5, -6) VDD and VDDQ: 2.6V ± 0.1V (-4) SSTL_2 compatible I/O Double-data rate architecture; two data transfers per clock cycle Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs Differential clock inputs (CK and CK) DLL aligns DQ and DQS transitions with CK transitions Comma.

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