IS46LR32640B - 2Gb Mobile DDR SDRAM

Product Overview

ISSI

Datasheet Details

Part number	IS46LR32640B
Manufacturer	ISSI
File Size	2.70 MB
Description	2Gb Mobile DDR SDRAM
Datasheet	IS46LR32640B Datasheet
Additional preview pages of the IS46LR32640B datasheet.

Product details

Description

The IS43/46LR16128B/32640B is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 128Meg words of 16bits or 64Meg words of 32bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

Features

JEDEC standard 1.8V power supply.
VDD = 1.8V, VDDQ = 1.8V.
Four internal banks for concurrent operation.
MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8) - Burst type (sequential & interleave).
Fully differential clock inputs (CK, /CK).
All inputs except data & DM are sampled at the rising edge of the system clock.
Data I/O transaction on both edges of data strobe.
Bidirectional data.

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Other Datasheets by ISSI

IS46LR32640A - 16M x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32100C - 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS46LR32100D - 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS46LR32160B - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32200B - 512K x 32Bits x 4Banks Mobile DDR SDRAM

Published: Feb 17, 2024 |