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IS46LR32640B - 2Gb Mobile DDR SDRAM

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General Description

SEPTEMBER 2022 The IS43/46LR16128B/32640B is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 128Meg words of 16bits or 64Meg words of 32bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

The Data Input/ Output signals are transmitted on a 16-bit or 32-bit bus.

Overview

IS43/46LR32640B IS43/46LR16128B 2Gb (x16, x32) Mobile DDR SDRAM Preliminary.

Key Features

  • JEDEC standard 1.8V power supply.
  • VDD = 1.8V, VDDQ = 1.8V.
  • Four internal banks for concurrent operation.
  • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8) - Burst type (sequential & interleave).
  • Fully differential clock inputs (CK, /CK).
  • All inputs except data & DM are sampled at the rising edge of the system clock.
  • Data I/O transaction on both edges of data strobe.
  • Bidirectional data.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32100C 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS46LR32100D 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32200C 512K x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32320B 8M x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32320C 1Gb Mobile DDR SDRAM
IS46LR32400F 1M x 32Bits x 4Banks Mobile DDR SDRAM