• Part: IS61NVP102418B
  • Description: 18Mb STATE BUS SYNCHRONOUS SRAM
  • Manufacturer: ISSI
  • Size: 1.92 MB
Download IS61NVP102418B Datasheet PDF
ISSI
IS61NVP102418B
FEATURES - 100 percent bus utilization - No wait cycles between Read and Write - Internal self-timed write cycle - Individual Byte Write Control - Single R/W (Read/Write) control pin - Clock controlled, registered address, data and control - Interleaved or linear burst sequence control using MODE input - Three chip enables for simple depth expansion and address pipelining - Power Down mode - mon data inputs and data outputs - /CKE pin to enable clock and suspend operation - JEDEC 100-pin QFP, 165-ball BGA and 119- ball BGA packages - Power supply: NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%) NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%) NVVP: VDD 1.8V (± 5%), VDDQ 1.8V (± 5%) - JTAG Boundary Scan for BGA packages - mercial, Industrial and Automotive (x36) temperature support - Lead-free available - For leaded option, please contact ISSI. DESCRIPTION The 18Meg product family features high-speed, lowpower synchronous static RAMs designed to provide a burstable, high-performance, 'no wait'...