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IS61WV12816EFALL ISSI 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

Title
Description The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability. This highly reliable process coupled with innovative circuit design techniques including ECC (SEC-DED: Single Error Correcting-Double Error Detecting) yield high-perfo...
Features
• High-speed access time: 8ns, 10ns, 12ns
• Single power supply
  – 1.65V-2.2V VDD(IS61/64WV12816EFALL)
  – 2.4V-3.6V VDD (IS61/64WV12816EFBLL)
• Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection
• Three state outputs
• Industrial and ...

Datasheet PDF File IS61WV12816EFALL Datasheet - 607.03KB
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