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IS61WV12816EFALL - 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

Download the IS61WV12816EFALL datasheet PDF. This datasheet also covers the IS64WV12816EFALL variant, as both devices belong to the same 128k x 16 high speed aynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

Key Features

  • High-speed access time: 8ns, 10ns, 12ns.
  • Single power supply.
  • 1.65V-2.2V VDD(IS61/64WV12816EFALL).
  • 2.4V-3.6V VDD (IS61/64WV12816EFBLL).
  • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection.
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS64WV12816EFALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IS61WV12816EFALL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS61WV12816EFALL. For precise diagrams, and layout, please refer to the original PDF.

IS61/64WV12816EFALL IS61/64WV12816EFBLL 128Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC APRIL 2022 KEY FEATURES • High-speed access time: 8ns, 10ns, 12ns • Single...

View more extracted text
L 2022 KEY FEATURES • High-speed access time: 8ns, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV12816EFALL) – 2.4V-3.6V VDD (IS61/64WV12816EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction.

📁 Similar Datasheet

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