IS61WV12816EFALL
FEATURES
- High-speed access time: 8ns, 10ns, 12ns
- Single power supply
- 1.65V-2.2V VDD(IS61/64WV12816EFALL)
- 2.4V-3.6V VDD (IS61/64WV12816EFBLL)
- Error Detection and Correction with optional ERR1/ERR2 output pin:
- ERR1 pin indicates 1-bit error detection and correction.
- ERR2 pin indicates 2-bit error detection
- Three state outputs
- Industrial and Automotive temperature support
- Lead-free available
FUNCTIONAL BLOCK DIAGRAM
A0
- A176
VDD VSS ERR1 ERR2 I/O0
- I/O7
I/O8
- I/O15
DECODER
Memory
Memory
Lower IO ECC Upper IO ECC
Array Array Array Array
215268Kx8 215268Kx5 215268Kx8 215268Kx5
I/O DATA CIRCUIT
ECC ECC
COLUMN I/OColumn I/O
DESCRIPTION
The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.
This highly reliable process coupled with innovative circuit design...
