IS61WV6416DALL - 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

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ISSI

Datasheet Details

Part number	IS61WV6416DALL
Manufacturer	ISSI
File Size	657.52 KB
Description	64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS61WV6416DALL Datasheet
Additional preview pages of the IS61WV6416DALL datasheet.

Product details

Description

The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits.It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provi

Features

HIGH SPEED: (IS61/64WV6416DALL/DBLL).
High-speed access time: 8, 10, 12, 20 ns.
Low Active Power: 135 mW (typical).
Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS).
High-speed access time: 25, 35 ns.
Low Active Power: 55 mW (typical).
Low Standby Power: 12 µW (typical) CMOS standby.
Single power supply.
Vdd 1.65V to 2.2V (IS61WV6416DAxx).
Vdd 2.4V to 3.6V (IS61/64WV6416DBxx).

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Published: Feb 20, 2024 |