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IS61WV6416EEBLL Datasheet

Manufacturer: ISSI (now Infineon)
IS61WV6416EEBLL datasheet preview

Datasheet Details

Part number IS61WV6416EEBLL
Datasheet IS61WV6416EEBLL-ISSI.pdf
File Size 636.02 KB
Manufacturer ISSI (now Infineon)
Description 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416EEBLL page 2 IS61WV6416EEBLL page 3

IS61WV6416EEBLL Overview

The ISSI IS61/64WV6416EEBLL is a high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

IS61WV6416EEBLL Key Features

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical)
  • Single power supply
  • Fully static operation: no clock or refresh
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available
  • Error Detection and Error Correction
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

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Part Number Description
IS61WV6416BLL 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV6416DALL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DALS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416ALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416DBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416FALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV6416EEBLL Distributor

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