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IS61WV6416BLL - 64K x 16 HIGH-SPEED CMOS STATIC RAM

Download the IS61WV6416BLL datasheet PDF. This datasheet also covers the IS64WV6416BLL variant, as both devices belong to the same 64k x 16 high-speed cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

bit static RAM organized as 65,536 words by 16 bits.

technology.

Key Features

  • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V.
  • CMOS low power operation: 50 mW (typical) operating 25 µW (typical) standby.
  • TTL compatible interface levels.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Automotive Temperature Available.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS64WV6416BLL_ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV6416DALL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DALS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS64WV6416BLL IS61WV6416BLL ® Long-term Support World Class Quality 64K x 16 HIGH-SPEED CMOS STATIC RAM APRIL 2019 FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 µW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Automotive Temperature Available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61/64WV6416BLL is a high-speed, 1,048,576- bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.