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IS61WV6416DBLS - 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

This page provides the datasheet information for the IS61WV6416DBLS, a member of the IS61WV6416DALL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM family.

Datasheet Summary

Description

65,536 words by 16 bits.

Features

  • HIGH SPEED: (IS61/64WV6416DALL/DBLL).
  • High-speed access time: 8, 10, 12, 20 ns.
  • Low Active Power: 135 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS).
  • High-speed access time: 25, 35 ns.
  • Low Active Power: 55 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV6416DAxx).
  • Vdd 2.4V to 3.6V (IS61/64WV6416DBxx).

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Datasheet preview – IS61WV6416DBLS

Datasheet Details

Part number IS61WV6416DBLS
Manufacturer ISSI
File Size 657.52 KB
Description 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet download datasheet IS61WV6416DBLS Datasheet
Additional preview pages of the IS61WV6416DBLS datasheet.

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Full PDF Text Transcription

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IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS IS64WV6416DBLL/DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM MARCH 2020 FEATURES HIGH SPEED: (IS61/64WV6416DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby • Single power supply — Vdd 1.65V to 2.2V (IS61WV6416DAxx) — Vdd 2.4V to 3.
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