IS61WV6416DBLS Description
It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable...
IS61WV6416DBLS Key Features
- High-speed access time: 8, 10, 12, 20 ns
- Low Active Power: 135 mW (typical)
- Low Standby Power: 12 µW (typical)
- High-speed access time: 25, 35 ns
- Low Active Power: 55 mW (typical)
- Low Standby Power: 12 µW (typical)
- Single power supply
- Vdd 1.65V to 2.2V (IS61WV6416DAxx)
- Vdd 2.4V to 3.6V (IS61/64WV6416DBxx)
- Fully static operation: no clock or refresh required