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IS61WV6416DALL - 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

General Description

65,536 words by 16 bits.

Key Features

  • HIGH SPEED: (IS61/64WV6416DALL/DBLL).
  • High-speed access time: 8, 10, 12, 20 ns.
  • Low Active Power: 135 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS).
  • High-speed access time: 25, 35 ns.
  • Low Active Power: 55 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV6416DAxx).
  • Vdd 2.4V to 3.6V (IS61/64WV6416DBxx).

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV6416DALS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416BLL 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS IS64WV6416DBLL/DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM MARCH 2020 FEATURES HIGH SPEED: (IS61/64WV6416DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby • Single power supply — Vdd 1.65V to 2.2V (IS61WV6416DAxx) — Vdd 2.4V to 3.