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IS61WV6416DBLL - 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS61WV6416DBLL datasheet PDF. This datasheet also covers the IS61WV6416DALL variant, as both devices belong to the same 64k x 16 high speed asynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

65,536 words by 16 bits.

Features

  • HIGH SPEED: (IS61/64WV6416DALL/DBLL).
  • High-speed access time: 8, 10, 12, 20 ns.
  • Low Active Power: 135 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS).
  • High-speed access time: 25, 35 ns.
  • Low Active Power: 55 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV6416DAxx).
  • Vdd 2.4V to 3.6V (IS61/64WV6416DBxx).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV6416DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV6416DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DALL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DALS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416BLL 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription

Click to expand full text
IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS IS64WV6416DBLL/DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM MARCH 2020 FEATURES HIGH SPEED: (IS61/64WV6416DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby • Single power supply — Vdd 1.65V to 2.2V (IS61WV6416DAxx) — Vdd 2.4V to 3.
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