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IS61WV6416DBLL Datasheet 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

Download the IS61WV6416DBLL datasheet PDF. This datasheet also includes the IS61WV6416DALL variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS61WV6416DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits.

It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Overview

IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS IS64WV6416DBLL/DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM MARCH.

Key Features

  • HIGH SPEED: (IS61/64WV6416DALL/DBLL).
  • High-speed access time: 8, 10, 12, 20 ns.
  • Low Active Power: 135 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS).
  • High-speed access time: 25, 35 ns.
  • Low Active Power: 55 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV6416DAxx).
  • Vdd 2.4V to 3.6V (IS61/64WV6416DBxx).