IS61WV6416DBLL Overview
Key Specifications
Package: TSOP
Pins: 44
Operating Voltage: 3 V
Max Voltage (typical range): 3.6 V
Description
The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. It is fabricated using ISSI's high- performance CMOS highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
Key Features
- High-speed access time: 8, 10, 12, 20 ns
- Low Active Power: 135 mW (typical)
- Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS)
- High-speed access time: 25, 35 ns
- Low Active Power: 55 mW (typical)
- Low Standby Power: 12 µW (typical) CMOS standby
- Single power supply
- Vdd 1.65V to 2.2V (IS61WV6416DAxx)
- Vdd 2.4V to 3.6V (IS61/64WV6416DBxx)
- Fully static operation: no clock or refresh required
