IS61WV6416DBLS, IS61WV6416DALL Datasheet - ISSI

IS61WV6416DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and .

IS61WV6416DBLS Features

* HIGH SPEED: (IS61/64WV6416DALL/DBLL)

* High-speed access time: 8, 10, 12, 20 ns

* Low Active Power: 135 mW (typical)

* Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS)

* High-speed access time: 25, 35 ns

* Low Active Power: 5

IS61WV6416DALL-ISSI.pdf

IS61WV6416DBLS Datasheet Preview — This datasheet PDF includes multiple part numbers: IS61WV6416DBLS, IS61WV6416DALL. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IS61WV6416DBLS, IS61WV6416DALL

Manufacturer:

ISSI

File Size:

657.52 KB

Description:

64k x 16 high speed asynchronous cmos static ram.

Note:

This datasheet PDF includes multiple part numbers: IS61WV6416DBLS, IS61WV6416DALL.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IS61WV6416DBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV6416DALL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV6416DALS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV6416BLL 64K x 16 HIGH-SPEED CMOS STATIC RAM (ISSI)

IS61WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

IS61WV102416ALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC (ISSI)

IS61WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC (ISSI)

IS61WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (ISSI)

TAGS

IS61WV6416DBLS IS61WV6416DALL 64K HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM ISSI

IS61WV6416DBLS Distributor