| Title | |
| Description | The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at wh... |
| Features |
HIGH SPEED: (IS61/64WV6416DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby • Single power supply — V... |
| Datasheet |
 IS61WV6416DBLS Datasheet - 657.52KB |
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