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Integrated Silicon Solution Electronic Components Datasheet

IS64WV10248EDBLL Datasheet

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

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IS61WV10248EDBLL
IS64WV10248EDBLL
1M x 8 HIGH-SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH ECC
FEBRUARY 2013
FEATURES
• High-speed access times: 8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with CE and OE options
CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Packages available:
48-ball miniBGA (6mm x 8mm)
– 44-pin TSOP (Type II)
• Industrial and Automotive Temperature Support
• Lead-free available
DESCRIPTION
The ISSI IS61/64WV10248EDBLL are very high-speed,
low power, 1M-word by 8-bit CMOS static RAM. The
IS61/64WV10248EDBLL are fabricated using ISSI's
high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61/64WV10248EDBLL operate from a single
power supply and all inputs are TTL-compatible.
The IS61/64WV10248EDBLL are available in 48 ball
mini BGA (6mm x 8mm) and 44-pin TSOP (Type II)
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A19
Decoder
Memory Array
(1024Kx8)
ECC Array
(1024Kx4)
IO0-7
8
I/O Data
Circuit
8
12
ECC
84
Column I/O
/CE
/OE
/WE
Control
Circuit
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com 1
Rev. A
02/20/2013


Integrated Silicon Solution Electronic Components Datasheet

IS64WV10248EDBLL Datasheet

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

No Preview Available !

IS61WV10248EDBLL
IS64WV10248EDBLL
PIN CONFIGURATION
48-pin Mini BGA (B) (6mm x 8mm)
1 23 45 6
A NC OE A0 A1 A2 NC
B NC NC A3 A4 CE I/O0
C NC NC A5 A6 I/O1 I/O2
D GND NC A17 A7 I/O3 VDD
E VDD NC NC A16 I/O4 GND
F NC NC A14 A15 I/O5 I/O6
G NC NC A12 A13 WE I/O7
H A18 A8 A9 A10 A11 A19
PIN DESCRIPTIONS
A0-A19 Address Inputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
I/O0-I/O7 Data Input / Output
Vdd Power
GND Ground
NC No Connection
44-pin TSOP (Type II )
NC 1
NC 2
A0 3
A1 4
A2 5
A3 6
A4 7
CE 8
I/O0 9
I/O1 10
VDD 11
GND 12
I/O2 13
I/O3 14
WE 15
A5 16
A6 17
A7 18
A8 19
A9 20
NC 21
NC 22
44 NC
43 NC
42 NC
41 A18
40 A17
39 A16
38 A15
37 OE
36 I/O7
35 I/O6
34 GND
33 VDD
32 I/O5
31 I/O4
30 A14
29 A13
28 A12
27 A11
26 A10
25 A19
24 NC
23 NC
2 Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
02/20/2013


Part Number IS64WV10248EDBLL
Description 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
Maker ISSI
Total Page 18 Pages
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