IS66WVE2M16ALL
Overview
The IS66WVE2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features
- Asynchronous and page mode interface
- Dual voltage rails for optional performance
- VDD 1.8V, VDDQ 1.8V
- Page mode read access
- Interpage Read access : 70ns
- Intrapage Read access : 20ns
- Low Power Consumption
- Asynchronous Operation < 30 m A
- Intrapage Read < 18m A
- Standby < 180 u A (max.)
- Deep power-down (DPD) < 3u A (Typ)
- Low Power Feature
- Temperature Controlled Refresh
- Partial Array Refresh
- Deep power-down (DPD) mode
- Operating temperature Range Industrial and...
