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IS66WVH8M8ALL - 8M x 8 HyperRAM

Description

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WVH8M8BLL 8M x 8 HyperRAM
IS66WVH8M8DALL 8M x 8 HyperRAM
IS66WVH8M8DBLL 8M x 8 HyperRAM
IS66WVH8M8EDALL 8M x 8 HyperRAM
IS66WVH8M8EDBLL 8M x 8 HyperRAM

Full PDF Text Transcription

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8M x 8 HyperRAM™ IS66WVH8M8ALL/BLL IS67WVH8M8ALL/BLL 6(37(0%(5 201 Overview The IS66/67WVH8M8ALL/BLL are integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 8M words by 8 bits. The device supports a HyperBus interface, Very Low Signal Count (Address, Command and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed specially for Mobile and Automotive applications. Distinctive Characteristics HyperBusTM Low Signal Count Interface  3.0V I/O, 11 bus signals – Single ended clock (CK)  1.
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