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IXYS

CPC5603CTR Datasheet Preview

CPC5603CTR Datasheet

N-Channel FET

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INTEGRATED CIRCUITS DIVISION
Parameter
Drain-to-Source Voltage - VDS
Max On-Resistance - RDS(on)
Max Power
Rating
415
14
2.5
Units
V
W
Features
415V Drain-to-Source Voltage
Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
Low On-Resistance: 8(Typical) @ 25°C
Low VGS(off) Voltage: -2.0V to -3.6V
High Input Impedance
Low Input and Output Leakage
Small Package Size SOT-223
PC Card (PCMCIA) Compatible
PCB Space and Cost Savings
Applications
Support Component for LITELINK™
Data Access Arrangement (DAA)
Telecom
Normally-On Switches
Ignition Modules
Converters
Security
Power Supplies
CPC5603
N-Channel Depletion Mode FET
Description
The CPC5603 is an N-channel, depletion mode Field
Effect Transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third generation process realizes
world class, high voltage MOSFET performance in an
economical silicon gate process. The vertical DMOS
process yields a highly reliable device particularly
in difficult application environments such as
telecommunications, security, and power supplies.
One of the primary applications for the CPC5603 is
as a linear regulator/hook switch for the LITELINK™
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5603 has a typical on-resistance of 8, a
drain-to-source voltage of 415V and is available in
the SOT-223 package. As with all MOS devices, the
FET structure prevents thermal runaway and
thermal-induced secondary breakdown.
Ordering Information
Part #
CPC5603CTR
Description
N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/Reel)
Package Pinout
D
4
123
GDS
Pin Number
1
2
3
4
Name
GATE
DRAIN
SOURCE
DRAIN
DS-CPC5603-R08
www.ixysic.com
1




IXYS

CPC5603CTR Datasheet Preview

CPC5603CTR Datasheet

N-Channel FET

No Preview Available !

INTEGRATED CIRCUITS DIVISION
Absolute Maximum Ratings @ 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Total Package Dissipation
Operational Temperature
Storage Temperature
Symbol
VDS
VGS
P
TA
TA
Ratings
415
±20
2.5
-40 to +85
-40 to +125
Units
V
V
W
oC
oC
CPC5603
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Electrical Characteristics @25oC (Unless Otherwise Specified)
Parameter
Gate-to-Source Off Voltage
Drain-to-Source Leakage Current
Drain Current
On Resistance
Gate Leakage Current
Gate Capacitance
Symbol
VGS(off)
IDS(off)
ID
RDS(on)
IGSS
CISS
Conditions
Min
ID= 2µA, VDS=10V, VDS=100V
-2
VGS= -5V, VDS=250V
-
VGS= -5V, VDS=415V
-
VGS= -2.7V, VDS=5V, VDS=50V
-
VGS= -0.57V, VDS=5V
130
VGS= -0.35V, IDS=50mA
-
VGS=10V, VGS=-10V
-
VDS= VGS=0V
-
Typ Max Units
-3.6
V
-
20
nA
-
1
A
-
5
mA
-
-
mA
8
14
-
0.1
A
-
300
pF
Thermal Characteristics
Parameter
Thermal Resistance
Symbol
RJC
Conditions
-
Min Typ Max Units
-
-
14
ºC/W
2
www.ixysic.com
R08


Part Number CPC5603CTR
Description N-Channel FET
Maker IXYS
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