INTEGRATED CIRCUITS DIVISION
Parameter
Drain-to-Source Voltage - VDS
Max On-Resistance - RDS(on)
Max Power
Rating
415
14
2.5
Units
V
W
Features
• 415V Drain-to-Source Voltage
• Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
• Low On-Resistance: 8 (Typical) @ 25°C
• Low VGS(off) Voltage: -2.0V to -3.6V
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
Applications
• Support Component for LITELINK™
Data Access Arrangement (DAA)
• Telecom
• Normally-On Switches
• Ignition Modules
• Converters
• Security
• Power Supplies
CPC5603
N-Channel Depletion Mode FET
Description
The CPC5603 is an N-channel, depletion mode Field
Effect Transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third generation process realizes
world class, high voltage MOSFET performance in an
economical silicon gate process. The vertical DMOS
process yields a highly reliable device particularly
in difficult application environments such as
telecommunications, security, and power supplies.
One of the primary applications for the CPC5603 is
as a linear regulator/hook switch for the LITELINK™
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5603 has a typical on-resistance of 8, a
drain-to-source voltage of 415V and is available in
the SOT-223 package. As with all MOS devices, the
FET structure prevents thermal runaway and
thermal-induced secondary breakdown.
Ordering Information
Part #
CPC5603CTR
Description
N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/Reel)
Package Pinout
D
4
123
GDS
Pin Number
1
2
3
4
Name
GATE
DRAIN
SOURCE
DRAIN
DS-CPC5603-R08
www.ixysic.com
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