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CPC5603CTR - N-Channel FET

This page provides the datasheet information for the CPC5603CTR, a member of the CPC5603 N-Channel FET family.

Datasheet Summary

Description

The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Features

  • 415V Drain-to-Source Voltage.
  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • Low On-Resistance: 8 (Typical) @ 25°C.
  • Low VGS(off) Voltage: -2.0V to -3.6V.
  • High Input Impedance.
  • Low Input and Output Leakage.
  • Small Package Size SOT-223.
  • PC Card (PCMCIA) Compatible.
  • PCB Space and Cost Savings.

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Datasheet preview – CPC5603CTR

Datasheet Details

Part number CPC5603CTR
Manufacturer IXYS
File Size 110.49 KB
Description N-Channel FET
Datasheet download datasheet CPC5603CTR Datasheet
Additional preview pages of the CPC5603CTR datasheet.

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Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power Rating 415 14 2.5 Units V  W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C • Low VGS(off) Voltage: -2.0V to -3.
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