IXBH12N300 Key Features
- High Blocking Voltage
- International Standard Packages
- Anti-Parallel Diode
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density
IXBH12N300 is Bipolar MOS Transistor manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXBH14N300HV | Bipolar MOS Transistor |
| IXBH16N170 | BIMOSFET Monolithic Bipolar MOS Transistor |
| IXBH20N300 | Bipolar MOS Transistor |
| IXBH20N360HV | Monolithic Bipolar MOS Transistor |
| IXBH22N300HV | Bipolar MOS Transistor |
+150 °C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Torque (TO-247) 1.13/10 Nm/lb.in.