* High Blocking Voltage
* International Standard Packages
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement
* High Power Density Applications:
* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
IXBH12N300 Datasheet (774.59 KB)
IXBH12N300
IXYS
774.59 KB
Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat) 3000V 12A 3.
📁 Related Datasheet
IXBH10N170 Bipolar MOS Transistor (IXYS Corporation)
IXBH14N300HV Bipolar MOS Transistor (IXYS)
IXBH15N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH15N160 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH16N170 BIMOSFET Monolithic Bipolar MOS Transistor (IXYS)
IXBH16N170A Bipolar MOS Transistor (IXYS Corporation)
IXBH20N300 Bipolar MOS Transistor (IXYS)
IXBH20N360HV Monolithic Bipolar MOS Transistor (IXYS)
IXBH22N300HV Bipolar MOS Transistor (IXYS)
IXBH2N250 Monolithic Bipolar MOS Transistor (IXYS)
