IXBH20N300 Overview
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design TO-247 (IXBH) G E C (Tab) G CE C (Tab) G = Gate C = Collector E = Emiiter Tab = Collector Features High Blocking Voltage Anti-Parallel Diode International Standard Packages Low Conduction Losses Low Gate Drive Requirement High Power Density Switch-Mode and Resonant-Mode Power Supplies tf VCE = 1250V, RG = 10 300 ns 504 ns td(on) Resistive Switching Times, T = 125°C 68 ns tr td(off) J IC = 20A, VGE = 15V V = 1250V, R = 10 540 ns 300 ns t CE G 395 ns f RthJC R
IXBH20N300 Key Features
- High Blocking Voltage
- Anti-Parallel Diode
- International Standard Packages
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density