IXBH20N300 Overview
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.
IXBH20N300 Key Features
- High Blocking Voltage
- Anti-Parallel Diode
- International Standard Packages
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density
IXBH20N300 Datasheet Details
| Part number | IXBH20N300 |
|---|---|
| Datasheet | IXBH20N300-IXYS.pdf |
| File Size | 771.98 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | Bipolar MOS Transistor |
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