IXBH12N300 Overview
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design TO-247 (IXBH) G E C (Tab) G C E C (Tab) G = Gate C = Collector E = Emitter Tab = Collector Features High Blocking Voltage International Standard Packages Anti-Parallel Diode Low Conduction Losses Low Gate Drive Requirement High Power Density Switched-Mode and Resonant-Mode Power Supplies tf VCE = 1250V, RG = 10 180 ns 540 ns td(on) Resistive Switching Times, T = 125°C 65 ns tr td(off) J IC = 12A, VGE = 15V V = 1250V, R = 10 395 ns 175 ns t CE G 530 ns f RthJC R
IXBH12N300 Key Features
- High Blocking Voltage
- International Standard Packages
- Anti-Parallel Diode
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density