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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBT12N300 IXBH12N300
VCES = IC110 = VCE(sat)
3000V 12A 3.2V
Symbol
VCES VCGR
VGES V
GEM
IC25 IC110 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
M d
Weight
Test Conditions
Maximum Ratings
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient
3000
V
3000
V
± 20
V
± 30
V
TC = 25°C TC = 110°C TC = 25°C, 1ms
30
A
12
A
100
A
VGE = 15V, TVJ = 125°C, RG = 30
ICM = 98
A
Clamped Inductive Load
1500
V
TC = 25°C
160
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
300
°C
Plastic Body for 10s
260
°C
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
IXBH12N300 Datasheet
