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IXBH12N300 - Bipolar MOS Transistor

Download the IXBH12N300 datasheet PDF. This datasheet also covers the IXBT12N300 variant, as both devices belong to the same bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Blocking Voltage.
  • International Standard Packages.
  • Anti-Parallel Diode.
  • Low Conduction Losses Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBT12N300-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat)  3000V 12A 3.2V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD M d Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 30 A 12 A 100 A VGE = 15V, TVJ = 125°C, RG = 30 ICM = 98 A Clamped Inductive Load 1500 V TC = 25°C 160 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Torque (TO-247) 1.13/10 Nm/lb.in.