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IXBH20N360HV Datasheet Monolithic Bipolar Mos Transistor

Manufacturer: IXYS (now Littelfuse)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IXBH20N360HV Overview

PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3600 3600 TO-247HV (IXBH) G E C G = Gate E = Emitter C (Tab) C = Collector Tab = Collector Features  High Voltage Packages  High Blocking Voltage  High Peak Current Capability  Low Saturation Voltage  Low Gate Drive Requirement  High Power Density  Switch-Mode and Resonant-Mode Power Supplies

IXBH20N360HV Key Features

  • High Voltage Packages
  • High Blocking Voltage
  • High Peak Current Capability
  • Low Saturation Voltage
  • Low Gate Drive Requirement
  • High Power Density

IXBH20N360HV Distributor