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Advance Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBT20N360HV IXBH20N360HV
VCES = IC110 = VCE(sat)
3600V 20A 3.4V
Symbol Test Conditions
Maximum Ratings
VCES VCGR VGES VGEM IC25 IC110 ICM
SSOA (RBSOA)
TSC (SCSOA)
PC TJ TJM Tstg TL TSOLD Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient
3600 3600
± 20 ± 30
TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load
VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive TC = 25°C
70 20 220 ICM = 160 VCES 1500
10 430 -55 ... +150 150 -55 ... +150
Maximum Lead Temperature for Soldering Plastic Body for 10s
300 260
Mounting Torque (TO-247HV)
1.
IXBH20N360HV Datasheet
