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IXBH20N360HV - Monolithic Bipolar MOS Transistor

Download the IXBH20N360HV datasheet PDF. This datasheet also covers the IXBT20N360HV variant, as both devices belong to the same monolithic bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Voltage Packages.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBT20N360HV-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat)  3600V 20A 3.4V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3600 3600 ± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive TC = 25°C 70 20 220 ICM = 160 VCES  1500 10 430 -55 ... +150 150 -55 ... +150 Maximum Lead Temperature for Soldering Plastic Body for 10s 300 260 Mounting Torque (TO-247HV) 1.