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Advance Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBT22N300HV IXBH22N300HV
VCES = IC110 = VCE(sat)
3000V 22A 2.7V
Symbol Test Conditions
Maximum Ratings
VCES VCGR VGES VGEM IC25 IC110 ICM
SSOA (RBSOA)
TSC (SCSOA)
PC TJ TJM Tstg TL TSOLD Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient
3000 3000 ± 20 ± 30
TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 15 Clamped Inductive Load
VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive TC = 25°C
60 22 190 ICM = 180 VCES 1500
10 290 -55 ... +150 150 -55 ... +150
Maximum Lead Temperature for Soldering
300
Plastic Body for 10s
260
Mounting Torque (TO-247HV)
1.
IXBH22N300HV Datasheet
