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IXBH22N300HV - Bipolar MOS Transistor

Download the IXBH22N300HV datasheet PDF. This datasheet also covers the IXBT22N300HV variant, as both devices belong to the same bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Voltage Packages.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBT22N300HV-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT22N300HV IXBH22N300HV VCES = IC110 = VCE(sat)  3000V 22A 2.7V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 3000 ± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 15 Clamped Inductive Load VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive TC = 25°C 60 22 190 ICM = 180 VCES  1500 10 290 -55 ... +150 150 -55 ... +150 Maximum Lead Temperature for Soldering 300 Plastic Body for 10s 260 Mounting Torque (TO-247HV) 1.