IXBT12N300 Key Features
- High Blocking Voltage
- International Standard Packages
- Anti-Parallel Diode
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density
- Part: IXBT12N300
- Manufacturer: IXYS (official site)
- Size: 774.59 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXBT12N300HV | Bipolar MOS Transistor |
| IXBT14N300HV | Bipolar MOS Transistor |
| IXBT16N170 | BIMOSFET Monolithic Bipolar MOS Transistor |
| IXBT16N170AHV | Bipolar MOS Transistor |
| IXBT20N300 | Bipolar MOS Transistor |
IXBT12N300 Description
+150 °C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Torque (TO-247) 1.13/10 Nm/lb.in.