IXBT20N300 Overview
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.
IXBT20N300 Key Features
- High Blocking Voltage
- Anti-Parallel Diode
- International Standard Packages
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density
Datasheet Details
| Part number | IXBT20N300 |
|---|---|
| Datasheet | IXBT20N300 IXBH20N300 Datasheet (PDF) |
| File Size | 771.98 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | Bipolar MOS Transistor |
|
|