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IXBT20N300 Datasheet Bipolar MOS Transistor

Manufacturer: IXYS (now Littelfuse)

Download the IXBT20N300 datasheet PDF. This datasheet also includes the IXBH20N300 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBH20N300-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBH20N300 IXBT20N300 VCES = IC110 = VCE(sat)  3000V 20A 3.2V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg T L T SOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 3000 V 3000 V ± 20 V ± 30 V 50 A 20 A 140 A ICM = 130 A 1500 V 250 W -55 ...

+150 °C 150 °C -55 ...

+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.

Key Features

  • High Blocking Voltage.
  • Anti-Parallel Diode.
  • International Standard Packages.
  • Low Conduction Losses Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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