IXBT20N300 Description
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.
IXBT20N300 Key Features
- High Blocking Voltage
- Anti-Parallel Diode
- International Standard Packages
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density
- Part: IXBT20N300
- Manufacturer: IXYS
- Size: 771.98 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXBT20N300HV | Bipolar MOS Transistor |
| IXBT20N360HV | Monolithic Bipolar MOS Transistor |
| IXBT22N300HV | Bipolar MOS Transistor |
| IXBT2N250 | Monolithic Bipolar MOS Transistor |
| IXBT12N300 | Bipolar MOS Transistor |